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| BCR12PM-12LC Triac Medium Power Use REJ03G1261-0300 Rev.3.00 Dec 20, 2006 Features * * * * IT (RMS) : 12 A VDRM : 600 V IFGTI, IRGTI, IRGTIII : 50 mA Viso : 1500 V * The product guaranteed maximum junction temperature 150C. * Insulated Type * Planar Passivation Type Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Heater control, motor control Maximum Ratings Parameter Repetitive peak off-state voltage Note1 Non-repetitive peak off-state voltage Note1 Symbol VDRM VDSM Voltage class 12 600 700 Unit V V Rev.3.00 Dec 20, 2006 page 1 of 7 BCR12PM-12LC Parameter RMS on-state current Surge on-state current I t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. 2 Symbol IT (RMS) ITSM It PGM PG (AV) VGM IGM Tj Tstg -- Viso 2 Ratings 12 72 21.6 5 0.5 10 2 - 40 to +150 - 40 to +150 2.0 1500 Unit A A As W W V A C C g V Typical value 2 Conditions Commercial frequency, sine full wave 360 conduction, Tc = 77C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage Note2 Symbol IDRM VTM Min. -- -- -- -- -- -- -- -- 0.2 -- 10 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.8 1.5 1.5 1.5 50 50 50 -- 4.3 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 20 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Note3 Junction to case Tj = 125C VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Gate trigger current Note2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 6 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.3.00 Dec 20, 2006 page 2 of 7 BCR12PM-12LC Performance Curves Maximum On-State Characteristics 10 7 Tj = 25C 5 3 2 101 7 5 3 2 10 7 5 3 2 10 -1 0 2 Rated Surge On-State Current 80 Surge On-State Current (A) 70 60 50 40 30 20 10 00 10 23 5 7 10 1 On-State Current (A) 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 23 5 7 10 2 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Voltage (V) 10 7 5 3 2 10 7 5 3 2 10 7 5 3 2 0 1 2 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 IFGTI Typical Example IRGTIII VGM = 10 V PGM = 5 W PG(AV) = 0.5 W IGM = 2 A IFGT I IRGT I IRGT III VGD = 0.2 V VGT = 1.5 V IRGTI 10-1 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 101 -60 -40-20 0 20 40 60 80 100120 140160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature Typical Example Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 2 3 5 7103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 103 7 5 3 2 102 7 5 3 2 10 -60 -40-20 0 20 40 60 80 100120140160 1 Junction Temperature (C) Conduction Time (Cycles at 60 Hz) Rev.3.00 Dec 20, 2006 page 3 of 7 BCR12PM-12LC Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 20 Transient Thermal Impedance (C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 1 3 On-State Power Dissipation (W) No Fins 18 16 360 Conduction 14 Resistive, 12 inductive loads 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 2 3 4 5 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 regardless of Resistive, 120 100 80 60 40 360 Conduction 20 Resistive, inductive loads Ambient Temperature (C) Case Temperature (C) 140 140 120 100 80 60 Curves apply 40 conduction angle 20 inductive loads 0 0 Natural convection 0 0 2 4 6 8 10 12 14 16 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40-20 0 20 40 60 80 100120140160 RMS On-State Current (A) Junction Temperature (C) Rev.3.00 Dec 20, 2006 page 4 of 7 BCR12PM-12LC Holding Current vs. Junction Temperature Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 10 7 T2+, G+ 5 Typical Example 3 2 1 Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120140 160 Latching Current (mA) 103 7 5 Typical Example Distribution T2+, G- Typical Example T2-, G- Typical Example 100 -60 -40 -20 0 20 40 60 80 100 120 140160 Junction Temperature (C) Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125C) 160 140 120 100 80 60 40 20 01 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 I Quadrant Typical Example Tj = 125C III Quadrant 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100120 140160 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150C) 160 Commutation Characteristics (Tj = 125C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 140 120 100 80 60 40 20 Typical Example Tj = 150C III Quadrant 7 5 3 2 10 7 5 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time III Quadrant I Quadrant Minimum Characteristics Value I Quadrant 3 2 Typical Example 10 70 10 0 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Tj = 125C, IT = 4 A = 500 s, VD = 200 V f = 3 Hz 23 5 7 101 23 5 7 102 Rate of Rise of Off-State Voltage (V/s) Rate of Decay of On-State Commutating Current (A/ms) Rev.3.00 Dec 20, 2006 page 5 of 7 BCR12PM-12LC Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 IRGT III IRGT I IFGT I Typical Example Commutation Characteristics (Tj = 150C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 7 5 Typical Example Tj = 150C 3 IT = 4 A 2 = 500 s VD = 200 V 1 f = 3 Hz III Quadrant 10 7 5 3 2 I Quadrant Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 10 70 10 0 23 5 7 10 1 23 5 7 10 2 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 6V V A 330 6V V A 330 Test Procedure I 6 Test Procedure II 6V V A 330 Test Procedure III Rev.3.00 Dec 20, 2006 page 6 of 7 BCR12PM-12LC Package Dimensions Package Name TO-220F(2) JEITA Package Code SC-67 RENESAS Code PRSS0003AA-B Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 5.0 1.2 17 3.2 0.2 13.5Min 3.6 1.3Max 0.8 2.54 2.54 8.5 0.5 2.6 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name - Lead forming code Standard order code example BCR12PM-12LC BCR12PM-12LC-A8 Note : Please confirm the specification about the shipping in detail. Rev.3.00 Dec 20, 2006 page 7 of 7 4.5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. 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Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. 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